| Title | Innovating the SoC Design for Emerging Memory Technologies |
| Author | *Sungjoo Yoo (POSTECH, Republic of Korea) |
| Page | pp. 437 - 438 |
| Abstract | A new emerging memory technology, Phase-change RAM is gaining more and more attention as a complement or replacement of existing DRAM in the main memory subsystem. In order for PRAM to be applied to the main memory, its limitations of write endurance, long read/write latency, high write power consumption need to be overcome on the PRAM chip and the SoC utilizing the PRAM. In this paper, we explain recent works on innovating SoC designs to better utilize PRAM-based main memory. |
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